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2024    2023    2022    2021    2020 2024 M. Sarwar, R. Ratajczak, C. Mieszczyński, A. Wierzbicka, S. Gierałtowska, R. Heller, S. Eisenwinder, W. Woźniak, E. Guziewicz Defect accumulation in β-Ga2O3 implanted with Yb Acta Materialia 268, 119760 (2024), https://doi.org/10.1016/j.actamat.2024.119760 2023 S....

ON4.2 Group of Physics of Defects and ALD Technology

  • Kontakt do odziału:
    Head of the group:
    prof. dr hab. Elżbieta Guziewicz, professor
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Group of Physics and Defects and ALD Technology ON4.2 deals with the growth and research of new semiconductor and dielectric materials, such as zinc, tin, gallium, hafnium, zirconium or titanium oxides, both undoped and doped in order to change their electrical, optical or magnetic properties. These materials are produced using the Atomic Layer Deposition, ALD, method as thin layers ranging...

Group

  • Kontakt do odziału:
    Head of the group:
    Prof. Dr. hab. Elżbieta Guziewicz, professor
    This email address is being protected from spambots. You need JavaScript enabled to view it.
     
    Scientists
    Dr. Sylwia Gierałtowska, assistant profesor
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    Prof. Dr. hab. Elżbieta Guziewicz, professor
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    Dr. Vitalii Ivanov, assistant profesor
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    Dr. Ramon Schifano, assistant profesor
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    Dr. Łukasz Wachnicki, assistant profesor
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    Engineering and technical staff
    MSc. Eng. Krzysztof Gościński
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    MSc. Krzysztof Kopalko
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    MSc. Eng. Wojciech Woźniak
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    PhD students
    MSc. Mahwish Sarwar
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