Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
- Afiliacje: ON1
- Data opublikowania (wydrukowania): 22-03-01
- Impact factor txt: 0,592
- Strony: 318-321
- Wolumin: 80
- Autor: Weyher J. L., Albrecht M., Wosiński Tadeusz, Nowak G., Strunk H. P., Porowski S.
- Tytuł publikacji: Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
- Rok: 2001
- Czasopismo / konferencja / monografia: Materials Science and Engineering B (Advanced Functional Solid-State Materials)
Materials Science and Engineering B (Advanced Functional Solid-State Materials), 80 (2001)
